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bsps/arm/tms570: prevent self clear when running from SRAM with HWINIT
The original internal SRAM build variant (tms570ls3137_hdk_intram) has been used heavily during our initial TMS570 BSP development. It is much faster then Flash application erase and update and it prolongs kit usability as the guaranteed erase/write cycles count is low (1000) for TMS570 used Flash technology. The problem manifested when I have prepared tms570lc4357_hdk_intram variant to help in #5537 with start of TMS570 development project and environment. HWINIT for internal SRAM build is enabled by --- a/spec/build/bsps/arm/tms570/objhwinitlc4357hdk.yml +++ b/spec/build/bsps/arm/tms570/objhwinitlc4357hdk.yml @@ -5,7 +5,9 @@ copyrights: - Copyright (C) 2023 embedded brains GmbH & Co. KG cppflags: [] cxxflags: [] -enabled-by: arm/tms570lc4357_hdk +enabled-by: + - arm/tms570lc4357_hdk + - arm/tms570lc4357_hdk_intram includes: [] install: [] links: [] --- a/spec/build/bsps/arm/tms570/optlowinit.yml +++ b/spec/build/bsps/arm/tms570/optlowinit.yml @@ -10,6 +10,7 @@ default: - enabled-by: - arm/tms570ls3137_hdk - arm/tms570lc4357_hdk + - arm/tms570lc4357_hdk_intram value: true - enabled-by: true value: false Closes #5539 Signed-off-by: Pavel Pisa <ppisa@pikron.com>
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@@ -60,7 +60,7 @@ __attribute__((__naked__)) void bsp_start_hook_0( void )
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"ldr r1, =#" RTEMS_XSTRING( TMS570_MEMORY_SRAM_SIZE ) "\n"
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"sub r0, lr, r0\n"
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"cmp r1, r0\n"
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"blt 1f\n"
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"bhi 1f\n"
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/*
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* Initialize the SRAM if we are not running in SRAM. While we are called,
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